X-FAB Silicon Foundries ("X-FAB"), a globally recognized excellent analog/mixed-signal wafer foundry, recently announced that on its existing 180nm CMOS semiconductor process platform - XS018, which is specially optimized for optical sensors, it is now Launched four new high-performance photodiodes. It enriches the product selection of photoelectric sensors and strengthens X-FAB's extensive product portfolio.
Among the four new products launched this time, two are response-enhanced photodiodes doafe and dobfpe, whose sensitivity has been improved in ultraviolet, visible and infrared wavelengths (full spectrum); there are also two advanced ultraviolet-specific Photodiodes dosuv and dosuvr. doafe is a full spectrum sensor with peak sensitivity around 730nm. At a wavelength of 730nm, the device has a spectral responsivity of 0.48A/W. Compared with the previous generation, the sensitivity of the new product is increased by about 15%, and the response is smoother, increasing by more than 50%. In terms of applications, a variety of applications including smoke detection, position sensing and spectroscopy can benefit from the greatly improved performance of this photodiode.
Unlike doafe, dobfpe, which was launched at the same time, performs particularly well in the red and near-infrared (NIR) parts of the spectrum (peak sensitivity is about 770nm). Insensitive to UV and blue light, this family of diodes features a unique spectral response with a distinct peak in the infrared (IR) region, making them ideal for proximity sensing applications. The newly launched dobfpe has enhanced sensitivity in the infrared (IR) range, which is approximately 25% higher than X-FAB’s previous dob devices. Especially with the trend of sensors increasingly being placed under glass panels, this device can achieve stronger performance and higher sensitivity in proximity sensing.
In order to expand the diversity of photodiode products, X-FAB also released a new advanced ultraviolet photodiode dosuv, which exhibits higher sensitivity in the UVC band (200nm to 280nm). At 260nm wavelength, dosuv performs nearly twice as well as any previous product. At 235nm wavelength, its spectral responsivity can reach 0.16A/W. In addition, a reference design device called dosuvr was released at the same time, which is suitable for sensor development based on dosuv.
These newly released photodiode devices all provide similar fill factors and photocurrent values ??as the previous generation products, while requiring approximately 20% less chip area, making them easier to integrate; their smaller dark current values ??mean This results in good signal integrity characteristics. At the same time, the product supports an operating temperature range of -40°C to 175°C.
Heming Wei, Marketing Manager of X-FAB Optoelectronics Technology, said: "These latest photodiodes have excellent performance and bring customers the performance improvement equivalent to the expected effect of upgrading to smaller process nodes. This highlights our XS018 The excellence of the process platform in creating photoelectric sensing devices enables device performance and reliability to surpass competitors.”
Currently, simulation models for each new photodiode are available. Customers can use these models to evaluate their expected electrical and optical behavior.