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Samsung announced that it has developed the first 10nm third-generation ultra-high performance and high-efficiency DRAM

 According to Samsung Electronics official website, as the global leader in advanced memory technology, Samsung Electronics announced today (21) the third generation of 10 nanometer (1z-nm) 8GB ultra-high performance and high efficiency DRAM (Dynamic Random Access Memory, dynamic Random access memory). Since the start of mass production of the second generation 10nm (1y-nm) 8Gb DDR4, Samsung has no longer developed 1z-nm 8Gb DDR4 with Extreme Ultra-Violet (EUV) processing, indicating that Samsung has broken through DRAM. Extend the limit.

 
With 10nm becoming the industry's smallest memory process node, Samsung is now ready to respond to growing market demands, and the new DDR4 DRAM has increased manufacturing productivity by more than 20% compared to the previous 1Y nanoscale version.
 
Mass production of 10nm 8Gb DDR4 will begin in the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.
 
“We are committed to breaking through the biggest challenges facing technology in order to drive greater innovation. We are pleased to lay the foundation for stable production of next-generation DRAM, ensuring maximum performance and energy efficiency.” Samsung Electronics DRAM Products and Technology Execution Vice President Jung-bae Lee said. "As we build a 10nm DRAM lineup, Samsung's goal is to support its global customers deploying cutting-edge systems and driving growth in the high-end memory market."
 
Samsung's 10nm DRAMs paved the way for accelerating the transition of global IT to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6, which will power future digital innovation. Subsequent 10nm products with higher capacity and performance will enable Samsung to enhance its business competitiveness and strengthen its leadership in the high-end DRAM market for applications including servers, graphics and mobile devices.
 
After fully verifying the 8 GB DDR4 module with a CPU manufacturer, Samsung will actively cooperate with customers around the world to provide a series of upcoming memory solutions.
 
Based on current industry demand, Samsung plans to increase its share of major memory production on its Pyeongtaek website while working with its global IT customers to meet the growing demand for the most advanced DRAM products.

Email: info@marscomponents.com or jim@jitcomp.com